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| Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1250 Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 7.50.2 s Features q q q q 14.00.5 Optimum for 25W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 100 80 5 6 3 35 2 150 -55 to +150 Unit V V V A A W 16.70.3 3.10.1 4.0 1.40.1 1.30.2 Solder Dip 0.5 -0.1 0.80.1 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.540.25 5.080.5 1 2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C B C C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VCE = 80V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 2A, IB = 2mA IC = 2A, IB = 2mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 2mA, IB2 = -2mA, VCC = 50V 20 3.5 2.5 0.6 80 2000 5000 30000 2.5 3.0 V V MHz s s s min typ max 100 100 100 Unit A A A V Rank classification Q P Rank hFE2 5000 to 15000 8000 to 30000 1 Power Transistors PC -- Ta 40 6 (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 5 2SD1890 IC -- VCE 100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Collector power dissipation PC (W) 35 30 25 20 15 10 5 0 0 30 Collector current IC (A) 4 IB=3mA 0.5mA 0.4mA 0.3mA 10 3 3 TC=-25C 1 25C 0.3 100C 2 (2) (3) (4) 0.2mA 1 0.1mA 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.1 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=1000 100000 hFE -- IC 1000 Cob -- VCB Collector output capacitance Cob (pF) VCE=5V IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 30000 30 300 10000 10 TC=100C 25C 100 3000 1000 300 100 30 TC=100C 3 -25C 30 1 25C -25C 10 0.3 3 0.1 0.1 0.3 1 3 10 30 100 10 0.01 0.03 1 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=-IB2) VCC=50V TC=25C ton tstg 1 tf 0.3 0.1 0.03 0.01 0 2 4 6 8 Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 10 I CP 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 t=1ms 10ms DC IC Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SD1890 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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